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US Patent 12131948 Techniques for void-free material depositions

Patent 12131948 was granted and assigned to Applied Materials on October, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Applied Materials
Applied Materials
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Date Filed
July 21, 2023
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Date of Patent
October 29, 2024
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Patent Applicant
Applied Materials
Applied Materials
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Patent Application Number
18224904
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Patent Citations
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US Patent 10109526 Etch profile control during skip via formation
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US Patent 7473597 Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures
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US Patent 8034683 Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed
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US Patent 9704973 Methods of forming fins for FinFET semiconductor devices and the selective removal of such fins
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US Patent 10109490 Cobalt interconnects formed by selective bottom-up fill
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US Patent 11749564 Techniques for void-free material depositions
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Patent Inventor Names
Kelvin Chan
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Shantanu Kallakuri
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Sony Varghese
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John Hautala
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M. Arif Zeeshan
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12131948
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Patent Primary Examiner
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Dale E Page
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CPC Code
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H01L 21/76865
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H01L 21/486
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H01L 21/76879
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