Golden has been acquired by ComplyAdvantage.Read about it here ⟶

‌

US Patent 11756983 Silicon nano light emitting diodes

Patent 11756983 was granted and assigned to Massachusetts Institute of Technology on September, 2023 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Patent Applicant

Massachusetts Institute of Technology

Current Assignee

Massachusetts Institute of Technology

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11756983

Patent Inventor Names

Jaehwan Kim

Jin Xue

Zheng Li

Rajeev J. Ram

Date of Patent

September 12, 2023

Patent Application Number

17765361

Date Filed

December 10, 2021

Patent Citations

‌

US Patent 8436333 Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method

‌

US Patent 7453097 Nanowire light emitting device and method of fabricating the same

‌

US Patent 8471270 Indirect-bandgap-semiconductor, light-emitting diode

Patent Primary Examiner

‌

Robert K Carpenter

Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 11756983 Silicon nano light emitting diodes

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API