US Patent 11756983 Silicon nano light emitting diodes
Patent 11756983 was granted and assigned to Massachusetts Institute of Technology on September, 2023 by the United States Patent and Trademark Office.
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US Patent 11756983 Silicon nano light emitting diodes
Article
Light-emitting diodes having radiative recombination regions with deep sub-micron dimensions are described. The LEDs can be fabricated from indirect bandgap semiconductors and operated under forward bias conditions to produce intense light output from the indirect bandgap material. The light output per unit emission area can be over 500 W cm
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
11756983
Patent Inventor Names
Jaehwan Kim
Jin Xue
Rajeev J. Ram
Zheng Li
Date of Patent
September 12, 2023
Patent Application Number
17765361
Date Filed
December 10, 2021
Patent Citations
Patent Primary Examiner
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