Golden has been acquired by ComplyAdvantage.Read about it here ⟶

‌

US Patent 11758736 Ferroelectric random access memory devices and methods

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

February 17, 2022

Date of Patent

September 12, 2023

Patent Application Number

17674422

Patent Citations

US Patent 9224833 Method of forming a vertical device

US Patent 9251888 SRAM cells with vertical gate-all-round MOSFETs

US Patent 9362355 Nanosheet MOSFET with full-height air-gap spacer

US Patent 9871140 Dual strained nanosheet CMOS and methods for fabricating

US Patent 10128327 DRAM interconnect structure having ferroelectric capacitors exhibiting negative capacitance

US Patent 10170520 Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system

US Patent 10374086 3D transistor having a gate stack including a ferroelectric film

US Patent 10559656 Wrap-all-around contact for nanosheet-FET and method of forming same

US Patent 10396145 Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

US Patent 10720431 Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers

•••

Patent Inventor Names

Chi On Chui

Bo-Feng Young

Sai-Hooi Yeong

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

Mohammad M Hoque

CPC Code

•••

Find more entities like US Patent 11758736 Ferroelectric random access memory devices and methods

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Golden Query Tool