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US Patent 11761117 SiC single crystal sublimation growth apparatus

Overview Structured Data Issues Contributors Activity

Is a

Date Filed

September 15, 2021

Date of Patent

September 19, 2023

Patent Application Number

17447742

Patent Citations

US Patent 7396411 Apparatus for manufacturing single crystal

US Patent 7387680 Method and apparatus for the production of silicon carbide crystals

US Patent 7767022 Method of annealing a sublimation grown crystal

US Patent 7217322 Method of fabricating an epitaxial silicon-germanium layer and an integrated semiconductor device comprising an epitaxial arsenic in-situ doped silicon-germanium layer

US Patent 7316746 Crystals for a semiconductor radiation detector and method for making the crystals

Patent Inventor Names

Edward Semenas

Ilya Zwieback

Patrick Flynn

Marcus Getkin

Avinash Gupta

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

CPC Code

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