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US Patent 11764062 Method of forming semiconductor structure

Patent 11764062 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2023 by the United States Patent and Trademark Office.

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Patent abstract

A method of forming a semiconductor structure is disclosed. A multi-layer structure is formed over a substrate. A photoresist stack with a stepped sidewall is formed on the multi-layer structure. A pattern of the photoresist stack is transferred to the multi-layer structure.

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