US Patent 11764068 Method of manufacturing semiconductor devices

In a method of manufacturing a semiconductor device, a trench pattern is formed in a first layer disposed over an underlying layer, and a first dimension of the trench pattern is reduced by first directional deposition. In the first directional deposition, a deposition rate on a first side wall of the trench pattern extending in a first axis is greater than a deposition rate on a second side wall of the trench pattern extending in a second axis crossing the first axis, the first axis and the second axis being horizontal and parallel to a surface of the underlying layer.