US Patent 11764068 Method of manufacturing semiconductor devices
Patent 11764068 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2023 by the United States Patent and Trademark Office.
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US Patent 11764068 Method of manufacturing semiconductor devices
Article
Patent abstract
In a method of manufacturing a semiconductor device, a trench pattern is formed in a first layer disposed over an underlying layer, and a first dimension of the trench pattern is reduced by first directional deposition. In the first directional deposition, a deposition rate on a first side wall of the trench pattern extending in a first axis is greater than a deposition rate on a second side wall of the trench pattern extending in a second axis crossing the first axis, the first axis and the second axis being horizontal and parallel to a surface of the underlying layer.
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Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Ming Lai
Chin-Hsiang Lin
Ken-Hsien Hsieh
Ru-Gun Liu
Wei-Liang Lin
Yung-Sung Yen
Date of Patent
September 19, 2023
Patent Application Number
17751361
Date Filed
May 23, 2022
Patent Citations
Patent Primary Examiner
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