US Patent 11769840 Oxide semiconductor substrate and schottky barrier diode
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US Patent 11769840 Oxide semiconductor substrate and schottky barrier diode
Article
Patent abstract
A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
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Patent Inventor Names
Emi Kawashima
Hiromi Hayasaka
Koki Yano
Masatoshi Shibata
Shigekazu Tomai
Date of Patent
September 26, 2023
Patent Application Number
15605779
Date Filed
May 25, 2017
Patent Citations
Patent Primary Examiner
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