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US Patent 11776631 Integrated circuit device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
June 24, 2021
Date of Patent
October 3, 2023
Patent Application Number
17357494
Patent Citations
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US Patent 9984760 Suppressing disturb of select gate transistors during erase in memory
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US Patent 9916901 Memory device including multiple gate-induced drain leakage current generator circuits
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US Patent 9953710 Memory devices with a connecting region having a band gap lower than a band gap of a body region
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US Patent 8427881 Semiconductor memory device and programming method thereof
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US Patent 8537615 Nonvolatile semiconductor memory device
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US Patent 8923072 Non-volatile memory device and method of fabricating the same
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US Patent 9236126 Simplified nonvolatile memory cell string and NAND flash memory array using the same
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US Patent 9355913 3D semiconductor devices and methods of fabricating same
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US Patent 9378831 Nonvolatile memory devices, operating methods thereof and memory systems including the same
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US Patent 9613980 Semiconductor memory device
•••
Patent Inventor Names
Jae-Duk Lee
Jang-Gn Yun
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11776631
Patent Primary Examiner
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Ajay Ojha
CPC Code
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G11C 16/0483
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H01L 27/11573
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H01L 27/11582
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G11C 16/14
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H01L 23/528

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