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US Patent 11776957 Gate cut with integrated etch stop layer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
December 7, 2022
Date of Patent
October 3, 2023
Patent Application Number
18076755
Patent Citations
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US Patent 8735235 Integrated circuit metal gate structure and method of fabrication
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US Patent 7723189 Method for manufacturing semiconductor device having recess gate
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US Patent 8569152 Cut-very-last dual-epi flow
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US Patent 8617996 Fin removal method
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US Patent 8637359 Fin-last replacement metal gate FinFET process
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US Patent 8946793 Integrated circuits having replacement gate structures and methods for fabricating the same
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US Patent 9064932 Methods of forming gate structures by a gate-cut-last process and the resulting structures
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US Patent 9070585 Electronic device including a trench and a conductive structure therein and a process of forming the same
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US Patent 9184101 Method for removing semiconductor fins using alternating masks
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US Patent 9209178 finFET isolation by selective cyclic etch
•••
Patent Citations Received
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US Patent 12074165 Gate cut with integrated etch stop layer
0
Patent Inventor Names
Rajasekhar Venigalla
Andrew M. Greene
Marc A. Bergendahl
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11776957
Patent Primary Examiner
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Marc Anthony Armand
CPC Code
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H01L 21/76802
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H01L 21/31144
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H01L 21/76877
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H01L 21/823437
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H01L 21/823475
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H01L 21/823821
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H01L 23/5286
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H01L 23/5329
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H01L 23/62
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H01L 29/66545
•••

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