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US Patent 11777024 Nitride semiconductor device and fabrication method therefor

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Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11777024

Patent Inventor Names

Tetsuya Fujiwara

Minoru Akutsu

Norikazu Ito

Ken Nakahara

Kenji Yamamoto

Date of Patent

October 3, 2023

Patent Application Number

17212619

Date Filed

March 25, 2021

Patent Citations

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US Patent 10256335 Nitride semiconductor device and fabrication method therefor

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US Patent 9837521 Nitride semiconductor device and fabrication method therefor

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US Patent 9230799 Method for fabricating semiconductor device and the semiconductor device

Patent Primary Examiner

CPC Code

Patent abstract

A nitride semiconductor device includes an electron transit layer (

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