US Patent 11777024 Nitride semiconductor device and fabrication method therefor
All edits
Edits on 5 Oct, 2023
Golden AI
Edits made to:
Infobox (+21 properties)
Article (+82 characters)
US Patent 11777024 Nitride semiconductor device and fabrication method therefor
Article
Patent abstract
A nitride semiconductor device includes an electron transit layer (
Infobox
Is a
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ken Nakahara
Kenji Yamamoto
Minoru Akutsu
Norikazu Ito
Tetsuya Fujiwara
Date of Patent
October 3, 2023
Patent Application Number
17212619
Date Filed
March 25, 2021
Patent Citations
Patent Primary Examiner
Find more entities like US Patent 11777024 Nitride semiconductor device and fabrication method therefor
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
