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US Patent 11784043 Formation of SiN thin films

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
August 19, 2021
Date of Patent
October 10, 2023
Patent Application Number
17406919
Patent Citations
‌
US Patent 8114761 Method for doping non-planar transistors
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US Patent 9960033 Method of depositing and etching Si-containing film
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US Patent 9984869 Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas
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US Patent 10269558 Method of forming a structure on a substrate
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US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
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US Patent 10381219 Methods for forming a silicon nitride film
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US Patent 10395917 Si precursors for deposition of SiN at low temperatures
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US Patent 10410857 Formation of SiN thin films
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US Patent 10424477 Si precursors for deposition of SiN at low temperatures
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US Patent 10580645 Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
•••
Patent Inventor Names
Toshiya Suzuki
Shang Chen
Kunitoshi Namba
Viljami J. Pore
Dai Ishikawa
Ryoko Yamada
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11784043
Patent Primary Examiner
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Monica D Harrison
CPC Code
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H01L 21/0217
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H01L 21/02208
‌
H01L 21/02274
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H05H 1/00
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H01L 21/0228

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