US Patent 11784054 Etching method and substrate processing system
Patent 11784054 was granted and assigned to Tokyo Electron on October, 2023 by the United States Patent and Trademark Office.
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US Patent 11784054 Etching method and substrate processing system
Article
Patent abstract
An etching method for performing side-etching of silicon germanium layers of a substrate having alternating silicon layers and the silicon germanium layers formed thereon is provided. The method includes modifying surfaces of residuals by supplying a plasmarized gas containing hydrogen to the residuals on exposed end surfaces of the silicon germanium layers, and performing side-etching on the silicon germanium layers by supplying a fluorine-containing gas to the silicon germanium layers.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuhito Miyata
Nobuhiro Takahashi
Yasuo Asada
Date of Patent
October 10, 2023
Patent Application Number
17022777
Date Filed
September 16, 2020
Patent Citations
Patent Primary Examiner
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