US Patent 11784196 Trenchless single-photon avalanche diodes
Patent 11784196 was granted and assigned to GlobalFoundries on October, 2023 by the United States Patent and Trademark Office.
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US Patent 11784196 Trenchless single-photon avalanche diodes
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Patent abstract
Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.
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Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Eng Huat Toh
Jing Hua Michelle Tng
Kien Seen Daniel Chong
Kiok Boone Elgin Quek
Ping Zheng
Date of Patent
October 10, 2023
Patent Application Number
17307323
Date Filed
May 4, 2021
Patent Citations
Patent Primary Examiner
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