Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wei-Yuan Lu
Fu-Kai Yang
Chen-Ming Lee
I-Wen Wu
Peng Wang
Mei-Yun Wang
Chun-An Lin
Guan-Ren Wang
Date of Patent
October 10, 2023
Patent Application Number
17571822
Date Filed
January 10, 2022
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Patent Primary Examiner
Patent abstract
A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.
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