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US Patent 11784222 Epitaxial source/drain structure and method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
January 10, 2022
Date of Patent
October 10, 2023
Patent Application Number
17571822
Patent Citations
‌
US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
‌
US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 10347541 Active gate contacts and method of fabrication thereof
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US Patent 10062692 Field effect transistors with reduced parasitic resistances and method
•••
Patent Inventor Names
Wei-Yuan Lu
Fu-Kai Yang
Chen-Ming Lee
I-Wen Wu
Peng Wang
Mei-Yun Wang
Chun-An Lin
Guan-Ren Wang
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11784222
Patent Primary Examiner
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Wasiul Haider
CPC Code
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H01L 29/41725
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H01L 29/66795
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H01L 29/0847

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