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US Patent 11784243 Oxide-nitride-oxide stack having multiple oxynitride layers
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Patent
Date Filed
December 2, 2021
Date of Patent
October 10, 2023
Patent Application Number
17541029
Patent Citations
US Patent 7390718 SONOS embedded memory with CVD dielectric
US Patent 8163660 SONOS type stacks for nonvolatile change trap memory devices and methods to form the same
US Patent 8222688 SONOS stack with split nitride memory layer
US Patent 8264028 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US Patent 8283261 Radical oxidation process for fabricating a nonvolatile charge trap memory device
US Patent 8315095 Multi-gate bandgap engineered memory
US Patent 8318608 Method of fabricating a nonvolatile charge trap memory device
US Patent 8482052 Silicon on insulator and thin film transistor bandgap engineered split gate memory
US Patent 8633537 Memory transistor with multiple charge storing layers and a high work function gate electrode
US Patent 8643124 Oxide-nitride-oxide stack having multiple oxynitride layers
•••
Patent Inventor Names
Sagy Charel Levy
Krishnaswamy Ramkumar
Fredrick Jenne
Sam G Geha
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11784243
Patent Primary Examiner
Mohammad M Choudhry
CPC Code
H01L 29/4234
H01L 29/42392
H01L 29/66795
H01L 29/792
H01L 29/7926
H01L 29/7833
H01L 29/0676
G11C 16/10
G11C 16/14
H01L 29/0673
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