US Patent 11784261 Stacked III-V semiconductor diode
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US Patent 11784261 Stacked III-V semiconductor diode
Article
Patent abstract
A stacked III-V semiconductor diode comprising or consisting of GaAs, with a heavily n-doped cathode layer, a heavily p-doped anode layer, and a drift region arranged between the cathode layer and the anode layer with a dopant concentration of at most 8·10
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Patent Number
Patent Inventor Names
Daniel Fuhrmann
Jens Kowalsky
Riteshkumar Bhojani
Thorsten Wierzkowski
Volker Dudek
Date of Patent
October 10, 2023
Patent Application Number
17667105
Date Filed
February 8, 2022
Patent Citations
Patent Primary Examiner
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