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US Patent 11789370 Optical proximity correction and photomasks

Overview Structured Data Issues Contributors Activity

Is a

Patent

Date Filed

February 7, 2022

Date of Patent

October 17, 2023

Patent Application Number

17665757

Patent Citations

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US Patent 9093530 Fin structure of FinFET

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US Patent 9367655 Topography-aware lithography pattern check

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US Patent 9390217 Methodology of optical proximity correction optimization

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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof

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US Patent 9865542 Interconnect structure with misaligned metal lines coupled using different interconnect layer

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US Patent 9870443 Method and apparatus for integrated circuit mask patterning

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US Patent 10678140 Suppression filter, radiation collector and radiation source for a lithographic apparatus; method of determining a separation distance between at least two reflective surface levels of a suppression filter

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US Patent 10678142 Optical proximity correction and photomasks

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US Patent 11243472 Optical proximity correction and photomasks

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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same

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Patent Inventor Names

Ken-Hsien Hsieh

Dong-Yo Jheng

Shih-Ming Chang

Ru-Gun Liu

Chih-Jie Lee

Shuo-Yen Chou

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11789370

Patent Primary Examiner

CPC Code

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