Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hong-Mao Lee
Chun-Hsien Huang
Wei-Jung Lin
Hsien-Lung Yang
Yu-Kai Chen
Date of Patent
October 17, 2023
Patent Application Number
17580904
Date Filed
January 21, 2022
Patent Citations
...
Patent Primary Examiner
Patent abstract
A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.
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