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US Patent 11791208 Method of forming contact metal

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
January 21, 2022
Date of Patent
October 17, 2023
Patent Application Number
17580904
Patent Citations
‌
US Patent 8399931 Layout for multiple-fin SRAM cell
‌
US Patent 7910453 Storage nitride encapsulation for non-planar sonos NAND flash charge retention
‌
US Patent 8377779 Methods of manufacturing semiconductor devices and transistors
‌
US Patent 8652894 Method for fabricating a FinFET device
‌
US Patent 8686516 Silicide formation and associated devices
‌
US Patent 8716765 Contact structure of semiconductor device
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US Patent 8723272 FinFET device and method of manufacturing same
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US Patent 8729627 Strained channel integrated circuit devices
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US Patent 8735993 FinFET body contact and method of making same
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US Patent 8736056 Device for reducing contact resistance of a metal
•••
Patent Inventor Names
Hong-Mao Lee
Chun-Hsien Huang
Wei-Jung Lin
Hsien-Lung Yang
Yu-Kai Chen
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11791208
Patent Primary Examiner
‌
S M Sohel Imtiaz
CPC Code
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H01L 29/7851
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H01L 29/41791
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H01L 29/66795
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H01L 21/76807
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H01L 29/665
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H01L 21/76843
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H01L 21/823814
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H01L 21/823431
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H01L 21/76895
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H01L 21/76805

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