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US Patent 11791381 Semiconductor devices
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Patent
Date Filed
January 13, 2023
Date of Patent
October 17, 2023
Patent Application Number
18096663
Patent Citations
US Patent 10748808 Dielectric gap-filling process for semiconductor device
US Patent 7402483 Methods of forming a multi-bridge-channel MOSFET
US Patent 9685554 Fin field effect transistor and semiconductor device
US Patent 9893182 FinFET and method for forming the same
US Patent 10032910 FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same
US Patent 10084069 Apparatus and method for FinFETs
US Patent 10163715 FinFET device and method of forming same
Patent Inventor Names
Soojin Jeong
Seungmin Song
Junbeom Park
Sunwook Kim
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11791381
Patent Primary Examiner
David C Spalla
CPC Code
H01L 29/775
H01L 29/7848
H01L 29/785
H01L 29/7851
H01L 29/7853
H01L 29/7855
H01L 2029/7858
H01L 21/02603
H01L 21/823431
H01L 21/823821
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