US Patent 11791423 Stacked III-V semiconductor diode
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US Patent 11791423 Stacked III-V semiconductor diode
Article
Patent abstract
A semiconductor having a n-doped cathode layer, a p-doped anode layer, and a drift region, arranged between the cathode layer and the anode layer, with a dopant concentration of at most 8·10
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Jens Kowalsky
Riteshkumar Bhojani
Volker Dudek
Date of Patent
October 17, 2023
Patent Application Number
17667274
Date Filed
February 8, 2022
Patent Citations
Patent Primary Examiner
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