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US Patent 11804402 FinFET structure with controlled air gaps

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
December 29, 2020
Date of Patent
October 31, 2023
Patent Application Number
17136385
Patent Citations
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US Patent 8785285 Semiconductor devices and methods of manufacture thereof
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 8912602 FinFETs and methods for forming the same
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
•••
Patent Inventor Names
Kuo-Hua Pan
Wen-Che Tsai
Hua Feng Chen
Min-Yann Hsieh
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11804402
Patent Primary Examiner
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Fazli Erdem
CPC Code
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H01L 29/4991
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H01L 29/49
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H01L 21/76
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H01L 21/7682
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H01L 21/76264
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H01L 21/764
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H01L 29/76

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