Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Da Un Jeon
Sang Young Kim
Byung Chan Ryu
Date of Patent
October 31, 2023
Patent Application Number
17325466
Date Filed
May 20, 2021
Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain pattern on the substrate, the source/drain pattern being at a side of the gate structure, a source/drain contact filling on and connected to the source/drain pattern, an entire top surface of the source/drain contact filling being lower than a top surface of the gate structure, and a connection contact directly on and connected to the source/drain contact filling, a top surface of the connection contact being higher than the top surface of the gate structure.
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