Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takaco Umezawa
Shinichi Asou
Hiroaki Yamamoto
Takahiro Shimokawa
Syunsuke Sasaki
Kenichi Kawabata
Haruyuki Miyata
Date of Patent
October 31, 2023
Patent Application Number
16992265
Date Filed
August 13, 2020
Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
According to one embodiment, a semiconductor memory device includes, on a substrate, a memory region and a peripheral circuit region in which an MOS transistor is formed. The MOS transistor includes a drain region and a source region disposed in a first direction parallel to a surface of the substrate. On a surface of the drain region, a drain electrode is formed to be connected with a contact plug. Further, on a surface of the source region, a source electrode is formed to be connected with a contact plug. When viewed in the first direction, the drain electrode has a region that does not overlap with the source electrode, and the source electrode has a region that does not overlap with the drain electrode.
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