US Patent 11805714 Phase change memory with conductive bridge filament
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US Patent 11805714 Phase change memory with conductive bridge filament
Article
Patent abstract
Methods and structures for fabricating a semiconductor device that includes a reduced programming current phase change memory (PCM) are provided. The method includes forming a bottom electrode. The method further includes forming a PCM and forming a conductive bridge filament in a dielectric to serve as a heater for the PCM. The method also includes forming a top electrode.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Guy M. Cohen
Nanbo Gong
Takashi Ando
Date of Patent
October 31, 2023
Patent Application Number
17393554
Date Filed
August 4, 2021
Patent Citations
Patent Primary Examiner
CPC Code
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