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US Patent 11805714 Phase change memory with conductive bridge filament
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Patent
Date Filed
August 4, 2021
Date of Patent
October 31, 2023
Patent Application Number
17393554
Patent Citations
US Patent 8124954 Conductive bridging random access memory device and method of manufacturing the same
US Patent 9570678 Resistive RAM with preferental filament formation region and methods
US Patent 7560721 Phase change material with filament electrode
US Patent 8385100 Energy-efficient set write of phase change memory with switch
Patent Inventor Names
Takashi Ando
Nanbo Gong
Guy M. Cohen
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11805714
Patent Primary Examiner
Jerome Leboeuf
CPC Code
G11C 2013/0083
G11C 13/0011
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