US Patent 11837270 Ferroelectric memory and memory element thereof

A ferroelectric memory is intended to reduce an applied voltage required at the times of writing and reading. A ferroelectric capacitor includes a ferroelectric film and a top electrode and a bottom electrode including materials with different work functions formed above and below the ferroelectric film. The transistor is connected to either the top electrode or the bottom electrode to select the ferroelectric capacitor. A drive control unit applies, at the times of writing and reading, a voltage lower than that at the time of erasing by a predetermined potential difference to the ferroelectric film.