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US Patent 11837270 Ferroelectric memory and memory element thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
February 6, 2020
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Date of Patent
December 5, 2023
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Patent Application Number
17436777
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Patent Citations
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US Patent 10192605 Memory cells and semiconductor devices including ferroelectric materials
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US Patent 10038092 Three-level ferroelectric memory cell using band alignment engineering
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US Patent 9460770 Methods of operating ferroelectric memory cells, and related ferroelectric memory cells
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Patent Inventor Names
Jun Okuno
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Toshiyuki Kobayashi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11837270
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Patent Primary Examiner
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Khamdan N. Alrobaie
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CPC Code
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G11C 11/2255
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G11C 11/2257
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G11C 11/2259
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G11C 11/2293
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G11C 11/2273
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G11C 11/221
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G11C 11/2275
0

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