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US Patent 11837541 Memory device and fabrication method thereof
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Patent
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Date Filed
November 9, 2020
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Date of Patent
December 5, 2023
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Patent Application Number
17093170
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Patent Citations
US Patent 9224747 Vertical NAND device with shared word line steps
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US Patent 10658378 Through array contact (TAC) for three-dimensional memory devices
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US Patent 9000563 Capacitor and register of semiconductor device, memory system including the semiconductor device, and method of manufacturing the semiconductor device
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US Patent 10593690 Hybrid bonding contact structure of three-dimensional memory device
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Patent Inventor Names
Kun Zhang
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Zhong Zhang
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Zhiliang Xia
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Wenxi Zhou
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11837541
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Patent Primary Examiner
Alexander G Ghyka
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