US Patent 11837651 Semiconductor device having isolation fins
Patent 11837651 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2023 by the United States Patent and Trademark Office.
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US Patent 11837651 Semiconductor device having isolation fins
Article
Patent abstract
A semiconductor device and method of manufacture which utilize isolation structures between semiconductor regions is provided. In embodiments different isolation structures are formed between different fins in different regions with different spacings. Some of the isolation structures are formed using flowable processes. The use of such isolation structures helps to prevent damage while also allowing for a reduction in spacing between different fins of the devices.
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Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Je-Ming Kuo0
Pei Yu Lu0
Date of Patent
December 5, 2023
0Patent Application Number
169422380
Date Filed
July 29, 2020
0Patent Citations
Patent Primary Examiner
CPC Code
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