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US Patent 11843001 Devices including stacked nanosheet transistors

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 20, 2021
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Date of Patent
December 12, 2023
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Patent Application Number
17380999
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Patent Citations
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US Patent 10347719 Nanosheet transistors on bulk material
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US Patent 10658481 Self-aligned gate cut in direct stacked vertical transport field effect transistor (VTFET)
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US Patent 10741456 Vertically stacked nanosheet CMOS transistor
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US Patent 10879308 Stacked nanosheet 4T2R unit cell for neuromorphic computing
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US Patent 10784171 Vertically stacked complementary-FET device with independent gate control
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US Patent 10991711 Stacked-nanosheet semiconductor structures
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US Patent 9929214 Nano-imprinted self-aligned multi-level processing method
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US Patent 10297664 Nanosheet transistor with uniform effective gate length
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Patent Inventor Names
Ki-Il Kim
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Kang-Ill Seo
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Byounghak Hong
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Seunghyun Song
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Gunho Jo
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11843001
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Patent Primary Examiner
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John A Bodnar
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CPC Code
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H01L 29/0673
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H01L 29/0669
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H01L 25/0657
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H01L 21/823456
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