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US Patent 11843034 Lateral bipolar transistor

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 17, 2021
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Date of Patent
December 12, 2023
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Patent Application Number
17529002
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Patent Citations
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8310027 Electronic device and manufacturing method thereof
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US Patent 8906755 Active matrix using hybrid integrated circuit and bipolar transistor
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US Patent 9059016 Lateral heterojunction bipolar transistors
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US Patent 9059195 Lateral bipolar transistors having partially-depleted intrinsic base
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US Patent 9263583 Integrated finFET-BJT replacement metal gate
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US Patent 9502504 SOI lateral bipolar transistors having surrounding extrinsic base portions
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US Patent 9553145 Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness
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US Patent 9748369 Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate
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US Patent 9536788 Complementary SOI lateral bipolar transistors with backplate bias
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•••
Patent Inventor Names
Man Gu
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Jagar Singh
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Haiting Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11843034
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Patent Primary Examiner
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Wasiul Haider
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CPC Code
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H01L 29/1008
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H01L 29/6625
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H01L 27/0783
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H01L 27/067
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