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US Patent 11854898 Wrap-around contact on FinFET

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 17, 2021
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Date of Patent
December 26, 2023
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Patent Application Number
17322007
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Patent Citations
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US Patent 8399931 Layout for multiple-fin SRAM cell
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US Patent 7183152 Epitaxially grown fin for FinFET
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US Patent 7667271 Fin field-effect transistors
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US Patent 7910453 Storage nitride encapsulation for non-planar sonos NAND flash charge retention
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US Patent 8377779 Methods of manufacturing semiconductor devices and transistors
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US Patent 8652894 Method for fabricating a FinFET device
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US Patent 8686516 Silicide formation and associated devices
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US Patent 8716765 Contact structure of semiconductor device
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US Patent 8723272 FinFET device and method of manufacturing same
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US Patent 8729627 Strained channel integrated circuit devices
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•••
Patent Inventor Names
Chen-Feng Hsu
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Yi-An Lin
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Neng-Kuo Chen
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Chih-Hsin Ko
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Clement Hsingjen Wann
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Meng-Chun Chang
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Ding-Kang Shih
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Hau-Yu Lin
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Gin-Chen Huang
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Sung-Li Wang
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11854898
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Patent Primary Examiner
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Mounir S Amer
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CPC Code
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H01L 29/66545
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H01L 29/785
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H01L 29/7848
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H01L 29/7853
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H01L 21/823821
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H01L 21/02532
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H01L 29/66795
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