US Patent 7183152 Epitaxially grown fin for FinFET

Patent 7183152 was granted and assigned to Advanced Micro Devices on February, 2007 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Advanced Micro Devices

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7183152

Date of Patent

February 27, 2007

Patent Application Number

10975475

Date Filed

October 29, 2004

Patent Citations Received

‌

US Patent 11854898 Wrap-around contact on FinFET

Patent Primary Examiner

‌

Chuong Anh Luu

Patent abstract

A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.

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