US Patent 7183152 Epitaxially grown fin for FinFET
Patent 7183152 was granted and assigned to Advanced Micro Devices on February, 2007 by the United States Patent and Trademark Office.
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Patent abstract
A method of forming a fin for a fin field effect transistor (FinFET) includes defining a trench in a layer of first material, where a width of an opening of the trench is substantially smaller than a thickness of the layer. The method includes growing a second material in the trench to form the fin and removing the layer of first material.
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US Patent 07183152 Epitaxially grown fin for FinFET US Patent 7183152 Epitaxially grown fin for FinFET
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Patent Number
0718315200
Patent Number
718315200
Edits on 27 Apr, 2023
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
071831520
Date of Patent
February 27, 2007
0Patent Application Number
109754750
Date Filed
October 29, 2004
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
071831520
Date of Patent
February 27, 2007
0Patent Application Number
109754750
Date Filed
October 29, 2004
0Official Website
Patent Primary Examiner
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US Patent 07183152 Epitaxially grown fin for FinFET
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07183152
Date of patent
February 27, 2007
Patent application number
10975475
Date Filed
October 29, 2004
Patent primary examiner
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