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US Patent 11855144 Source/drain metal contact and formation thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 21, 2021
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Date of Patent
December 26, 2023
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Patent Application Number
17352682
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Patent Citations
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9472502 Cobalt interconnect techniques
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US Patent 9520482 Method of cutting metal gate
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US Patent 10734280 Integrated circuit devices and method of manufacturing the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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•••
Patent Inventor Names
Chih-Hao Wang
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Yu-Ming Lin
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Tien-Lu Lin
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Jia-Chuan You
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Chia-Hao Chang
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Shih-Chuan Chiu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11855144
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Patent Primary Examiner
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Dale E Page
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CPC Code
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H01L 29/66545
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H01L 29/0847
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