Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Huicheng Chang0
Liang-Yin Chen0
Wen-Yen Chen0
Su-Hao Liu0
Li-Ting Wang0
Yee-Chia Yeo0
Li-Heng Chen0
Ying-Lang Wang0
Date of Patent
December 26, 2023
0Patent Application Number
176481560
Date Filed
January 17, 2022
0Patent Citations
0
...
Patent Primary Examiner
Patent abstract
A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.
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