Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 15, 2015
Patent Application Number
13795786
Date Filed
March 12, 2013
Patent Citations Received
Patent Primary Examiner
Patent abstract
Integrated circuit devices having FinFETs with channel regions low in crystal defects and current-blocking layers underneath the channels to improve electrostatic control. Optionally, an interface control layer formed of a high bandgap semiconductor is provided between the current-blocking layer and the channel. The disclosure also provides methods of forming integrated circuit devices having these structures. The methods include forming a FinFET fin including a channel by epitaxial growth, then oxidizing a portion of the fin to form a current-blocking layer.
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