Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Weng Chang0
Chi On Chui0
Hsin-Yi Lee0
Cheng-Lung Hung0
Date of Patent
December 26, 2023
0Patent Application Number
169092600
Date Filed
June 23, 2020
0Patent Citations
...
Patent Primary Examiner
Patent abstract
Methods for tuning effective work functions of gate electrodes in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate dielectric layer over the channel region; and a gate electrode over the gate dielectric layer, the gate electrode including a first work function metal layer over the gate dielectric layer, the first work function metal layer including aluminum (Al); a first work function tuning layer over the first work function metal layer, the first work function tuning layer including aluminum tungsten (AlW); and a fill material over the first work function tuning layer.
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