Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shy-Jay Lin0
Wilman Tsai0
Ming-Yuan Song0
Date of Patent
January 2, 2024
0Patent Application Number
178765870
Date Filed
July 29, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
