US Patent 11862373 MRAM stacks and memory devices
Patent 11862373 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2024 by the United States Patent and Trademark Office.
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US Patent 11862373 MRAM stacks and memory devices
Article
Patent abstract
Memory stacks, memory devices and method of forming the same are provided. A memory stack includes a spin-orbit torque layer, a magnetic bias layer and a free layer. The magnetic bias layer is in physical contact with the spin-orbit torque layer and has a first magnetic anisotropy. The free layer is disposed adjacent to the spin-orbit torque layer and has a second magnetic anisotropy perpendicular to the first magnetic anisotropy.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ming-Yuan Song0
Shy-Jay Lin0
Wilman Tsai0
Date of Patent
January 2, 2024
0Patent Application Number
178765870
Date Filed
July 29, 2022
0Patent Citations
Patent Primary Examiner
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