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US Patent 11869770 Selective deposition of etch-stop layer for enhanced patterning

Patent 11869770 was granted and assigned to Lam Research on January, 2024 by the United States Patent and Trademark Office.

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Patent Applicant

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Current Assignee

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Jon Henri0

Bhavin Jariwala0

Kapu Sirish Reddy0

Arpan Pravin Mahorowala0

Elham Mohimi0

Pengyi Zhang0

Nagraj Shankar0

Date of Patent

January 9, 2024

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Patent Application Number

173893010

Date Filed

July 29, 2021

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Patent Primary Examiner

Sophia T Nguyen

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CPC Code

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Patent abstract

Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M

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