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US Patent 11869964 Field effect transistors with modified access regions

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 20, 2021
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Date of Patent
January 9, 2024
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Patent Application Number
17325635
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Patent Citations
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US Patent 7230284 Insulating gate AlGaN/GaN HEMT
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US Patent 7501669 Wide bandgap transistor devices with field plates
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US Patent 7550783 Wide bandgap HEMTs with source connected field plates
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US Patent 7573078 Wide bandgap transistors with multiple field plates
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US Patent 7709859 Cap layers including aluminum nitride for nitride-based transistors
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US Patent 7906799 Nitride-based transistors with a protective layer and a low-damage recess
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US Patent 9666707 Nitride-based transistors with a cap layer and a recessed gate
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US Patent 9847411 Recessed field plate transistor structures
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US Patent 10388753 Regrowth method for fabricating wide-bandgap transistors, and devices made thereby
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US Patent 9984881 Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
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•••
Patent Inventor Names
Fabian Radulescu
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Scott Sheppard
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Kyoung-Keun Lee
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11869964
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Patent Primary Examiner
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Jay C Chang
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CPC Code
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H01L 29/66462
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H01L 29/2003
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H01L 29/0891
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