US Patent 11875834 Magnetic memory device and memory system
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US Patent 11875834 Magnetic memory device and memory system
Article
Patent abstract
According to one embodiment, a magnetic memory device includes a first memory cell and a control circuit. The first memory cell includes a first magnetoresistance effect element and a first switching element coupled in series. The control circuit is configured to repeatedly apply a first voltage to the first memory cell until a first condition is satisfied in a first operation.
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Patent Number
Patent Inventor Names
Masayoshi Iwayama0
Date of Patent
January 16, 2024
0Patent Application Number
174650800
Date Filed
September 2, 2021
0Patent Citations
Patent Primary Examiner
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