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US Patent 11875834 Magnetic memory device and memory system

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
September 2, 2021
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Date of Patent
January 16, 2024
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Patent Application Number
17465080
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Patent Citations
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US Patent 9728240 Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)
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US Patent 9767878 Semiconductor memory device and method for controlling the same
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US Patent 10236075 Predicting tunnel barrier endurance using redundant memory structures
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US Patent 10714198 Dynamic 1-tier scan for high performance 3D NAND
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US Patent 10707269 Semiconductor storage device
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US Patent 10839928 Non-volatile memory with countermeasure for over programming
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US Patent 6885582 Magnetic memory storage device
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US Patent 6999366 Magnetic memory including a sense result category between logic states
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Patent Inventor Names
Masayoshi Iwayama
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11875834
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Patent Primary Examiner
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Michael T. Tran
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CPC Code
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G11C 11/1657
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G11C 11/1659
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G11C 2029/5006
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G11C 11/1675
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G11C 29/02
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G11C 29/50
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G11C 29/70
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G11C 2029/0409
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G11C 11/15
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G06F 13/4027
0
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