US Patent 11876116 Method for manufacturing a grid
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US Patent 11876116 Method for manufacturing a grid
Article
Patent abstract
A grid is manufactured with a combination of ion implant and epitaxy growth. The grid structure is made in a SiC semiconductor material with the steps of a) providing a substrate comprising a doped semiconductor SiC material, said substrate comprising a first layer (n
Infobox
Is a
Patent Jurisdiction
Patent Number
Patent Inventor Names
Adolf Schoner0
Hossein Elahipanah0
Nicolas Thierry-Jebali0
Sergey Reshanov0
Date of Patent
January 16, 2024
0Patent Application Number
176608880
Date Filed
April 27, 2022
0Patent Citations
Patent Primary Examiner
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